circuits with external gate exposure require a protection gate resistor or other static discharge protection.

susceptibility to cumulative damage from static discharge prior to installation.The main disadvantages of these FETs over bipolar transistors in switching are the following: It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. UNISONIC TECHNOLOGIES CO., LTD 2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state 1resistance while provide rugged, reliable, and fast switching performance. On a data sheet this MOSFET is shown to be capable of switching 200ma with a 60V rating. MOSFET for voltage controlled small signal switching. The 2N7000 is a N-Channel Enhancement Mode Field Effect Transistor, a.k.a. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. 2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. For the best experience on our site, be sure to turn on Javascript in your browser.

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